Principle and Working:
Diode : It is a device formed from a junction of n-type and p-type semiconductor material. In the forward-biased and reversed-biased regions, the current and the voltage, of a semiconductor diode are related by the diode equation:
I = I0(ev/ηvt-1)
Where I = current flowing in the diode,
I0 = reverse saturation current
V = voltage applied to the diode,
Vt = volt- equivalent of temperature = k T/q = T/ 11,600 = 26mV (@ room temp)
Transistor : It is a semiconductor device used to amplify or switch electrical signals and power. The I-V characteristics of a transistor refer to the relationship between the current flowing through the transistor and voltage applied across it. These characteristics differ from different transistor configurations namely the common emitter, common base, and common collector configurations.
Field-Effect Transistor (FET): It Also known as Unipolar Transistor, is a three-ended (three electrodes), voltage-controlled semiconductor electronic component that can amplify the electrical signal. It is used to study Output / drain characteristic and Transfer characteristics:
